SILICIUM (Si) ASSAY

Silicon, also known as silicium, is a common element found in many minerals and mineral concentrates.
Accurate measurement of silicon concentration in concentrates is important for a variety of industrial and manufacturing applications. The most common method for silicon assay in concentrates is X-ray fluorescence (XRF), a non-destructive technique that uses X-rays to excite atoms and measure their resulting emissions. Other methods for silicon assay include atomic absorption spectroscopy (AAS), inductively coupled plasma (ICP) techniques, and gravimetric analysis.
The choice of method depends on factors such as the concentration of silicon in the sample, the presence of other elements or compounds that may interfere with the analysis, and the desired level of accuracy. Accurate silicon assay is important for ensuring the quality and purity of mineral concentrates and for understanding their potential use and applications in various industries.

Reference methodologies

There are several methods that XERTEK uses to assay silicon in concentrates, each with its own working range and level of sensitivity. Here are some common silicon assay methodologies with their corresponding working ranges:

Atomic Absorption Spectroscopy (AAS): AAS is a method that can be used for silicon analysis, particularly for low to mid-range concentrations. The working range for AAS is typically between 0.1-1%, although this can vary depending on the specific instrument and sample preparation method.

Inductively Coupled Plasma Optical Emission Spectrometry (ICP-OES): ICP-OES is a powerful analytical technique that can detect a wide range of elements, including silicon. The working range for ICP-OES is typically between 0.01-10%.

Gravimetric analysis: Gravimetric analysis is a classical method that can be used to determine the mass of silicon in a sample. The working range for gravimetric analysis depends on the specific sample matrix and the desired level of accuracy.

The working range for each method can vary depending on the specific instrument, sample preparation method, and other factors.